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Jun 1, 2023
(4)The synthesis of phenolic resin modified with octamethyltetrasiloxane D4: Firstly, melt phenol at a temperature of 40-45 ° C and add NaOH aqueous solution. After reaction for 1 minute, add the first formaldehyde, which accounts for 80% of the total input. Then maintain the temperature between 80 and 85 ° C, and after reaction for 1 hour, add one dose of methanol at a rate of 20% of the feed amount. The reaction temperature for the second dose of formaldehyde should be controlled between 70 and 75 ° C. Finally, the temperature was raised and maintained between 80~85 ° C for synthesis reaction, resulting in a brownish red product.
Synthesis of Organosilicon Modified Phenolic Resin: Add a certain amount of distilled water to a four necked bottle equipped with a stirring, condensing tube, thermometer, and drip tube. After heating to a certain temperature, add a certain amount of Sodium Dodecyl Sulfonate (SOS) to completely dissolve it; Add about 30% phenolic resin and 50% 04 lotion, stir for 30min and adjust the pH value between 6~7. Raise the temperature to 90 ° C and add 20% initiator potassium persulfate at 60-70 ° C; After reaction at this temperature for 1h, the remaining phenolic resin, octamethyltetrasiloxane (04) lotion and initiator shall be added by dropping. After dropping, 1~2mL initiator shall be added. The reaction shall be continued and discharged after cooling.
(5) The preparation method for electronic device packaging material is as follows: 100 parts of linear phenolic resin (light weight equivalent value under the action of butanol and catalyst, reaction to obtain a modified rate of 99% silicon oxide modified phenolic resin. 35 parts of the product are taken out, and then mixed with 15 parts of linear phenolic resin, 90 parts of linear phenolic epoxy resin, 10 parts of Australian phenolic epoxy resin, 430 parts of quartz powder, 25 parts of titanium dioxide, 2 Five parts of PPh3, three parts of carbon black and three parts of Brazilian palm wax were used as semiconductor transfer molding materials to obtain packaging materials with good molding processability. The products were further cured at 75 ° C for 8h at a mold temperature of l75 ° C and a residence time of 1min. The obtained transistor shell could withstand 500 times of cold and hot shock at - 65~150 ° C, and none of the 20 samples was cracked.
(6) Organosilicon modified cashew phenolic coating cashew phenolic is the main component of natural cashew shell liquid (CNSL), and its structure is similar to the main component of lacquer, urushiol. The cashew phenolic polymer coating (CF) prepared from cashew phenolic and methylbenzene has excellent physical and chemical properties similar to that of raw lacquer, and its price is low, which has been applied in practice. However, due to the presence of phenolic light group - OH in cashew phenolic polymer molecules, its coating is prone to oxidation and has poor alkaline resistance, making it unsuitable for use as an anti-corrosion coating. In order to prepare high-performance anti-corrosion coatings from natural cashew nut shell liquid and apply them in anti-corrosion engineering, the phenolic light group in CF was easily reacted with small organic silicon molecules, and CF was modified with dimethyl dichlorosilane (OMS) to prepare organic silicon modified cashew nut phenolic polymer (CF-S) Five portions of CF xylene solution are added into a three necked flask with a stirrer, a drip funnel and a catheter, and three portions of measured OMS are dropped drop by drop under stirring. The solution reacts at room temperature for 25 min, and then the solid content of the product is adjusted to about 55% to obtain CF Si. The HCI gas emitted during the reaction process is absorbed by a NaOH solution.
Organic silicon modified cashew phenolic polymer coating was prepared by modifying cashew phenolic polymer coating with OMS. The phenolic shin group in CF molecule was combined with the S atom of DMS to reduce the concentration of phenolic light group in CF-Si molecule, increase the crosslinking density, and not only shorten the room temperature curing time of CF-Si to 25 minutes, but also greatly improve the performance of CF-Si coating: hardness The conventional physical and mechanical properties such as glossiness and impact resistance are superior to CF (see Table 3-28); CF-S] has higher thermal stability than CF (Figure 3-11); After 1400 hours of UV irradiation, the loss rate of CF Si was only 27%, while CF reached 58%, indicating an improvement in its UV resistance (Figure 3-12); The chemical medium corrosion resistance (especially alkali resistance) of CF-Si coating film has been greatly improved, and the alkali resistance of CF-Si is superior to that of CF.
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